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Analysis & Examples
Power Device
Analysis example of power transistor
Analysis example of power transistor Using Mixed-Mode analysis function of our device simulator where device and circuit are analyzed at one time, it is an applied example that designs a circuit of power transistor:IGBT to detect Load short-circuit or power short-circuit so as to shield the circuit. We are providing not only simulators but also consulting services to take advantage of them.
Analysis example of power transistor Using Mixed-Mode analysis function of our device simulator where device and circuit are analyzed at one time, it is an applied example that designs a circuit of power transistor:IGBT to detect Load short-circuit or power short-circuit so as to shield the circuit. We are providing not only simulators but also consulting services to take advantage of them.
Image Sensor
Analysis example of image sensor
The more miniaturization and sensitivity of light-sensitive elements such as CCD and CMOS image sensors is going on, the more calculation based on undulatory of light is required to design the structure of microlens and light receiving part. It is an analysis example that responds to those requirements optimally using our simulator.
The more miniaturization and sensitivity of light-sensitive elements such as CCD and CMOS image sensors is going on, the more calculation based on undulatory of light is required to design the structure of microlens and light receiving part. It is an analysis example that responds to those requirements optimally using our simulator.
Stress DFM / Stress Analysis
Stress analysis example for stress DFM
It is an analysis example that analyzes the property fluctuation of transistor accurately when there is stress depended on pattern layouts adjacent to transistors in order to do for DFM(Design For Manufacturability), since it is becoming a serious problem in the cutting edge transistors.
It is an analysis example that analyzes the property fluctuation of transistor accurately when there is stress depended on pattern layouts adjacent to transistors in order to do for DFM(Design For Manufacturability), since it is becoming a serious problem in the cutting edge transistors.
Variability Analysis of Shallow Trench Isolation
Three-dimensional edge profile variability analysis example of trench isolation. Our TCAD series can execute three-dimensional process simulation and device simulation stably though in fact it has been difficult so far. This analysis example shows that the property uctuation of a most-advanced transistor depends on fine eometric difference of the device isolation region, and which ributes to the variability analysis of the cutting-edge transistors.
