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3D Process Simulator

3D Process Simulator
  • TiSSiEN-PIM
  • TiSSiEN-PDF
  • TiSSiEN-POX
  • TiSSiEN-PST
  • TiSSiEN-PCA
  • TiSSiEN-POP


This series are three dimensional process simulators provided with a 3D topography / structure calculation technique and a high-speed calculation technique. The 3D topography / structure calculation technique and the high-speed calculation technique are the techniques uniquely developed by TCAD International for ensuring superior practical usability. This series provide extremely stable functions to calculate three-dimensional topography / structure, ion implantation and impurity diffusion. Furthermore, these are provided with various functions such as a point defect diffusion model, a stable oxidization calculation, and an extremely precise ion implantation calculation using Monte Carlo model supporting supreme 3D simulation technique. In this series, a general purpose precise wiring capacitance simulator, and a high speed simulator for anlyzing optical characteristics of image sensor elements are also provided.

3D Device Simulator

Products
  • TiSSiEN-DMM
  • TiSSiEN-DCG
  • TiSSiEN-DLT
  • TiSSiEN-DMC
3D device simulator is provided with a high speed calculation technique and a parallel calculation technique that are the techniques uniquely developed by TCAD International. By using it together with our 3D-Process Simulator, you can enjoy its eminent performance. Using device topography / structure created by 3D-Process Simulator, topography / structure effect of the device can be analyzed precisely. In Mixed-Mode analysis coupled with a circuit simulator, device operation in an LSI or actual circuit can be analyzed. Analysis of erroneous operation in a circuit level, which is caused by α-ray incidence, is also carried out at a high speed. Particle model, which uses an acceleration parallel calculation and / or Window-Monte Carlo method, gives you deep inside of device operation.

Layout Dependent Stress DFM

Products
Variation in transistor characteristics due to stress distribution arises as a considerable problem in designing most-advanced devices. TiSSiEN-Atropos is an actually useful DFM (Design For Manufacturability) system that feeds back stress analysis in large scale region and its results to a circuit design stage. TCAD International's original techniques enable high speed calculation in large scale region and have successfully passed in strict tests of actual application level.

Graphic tool

Products
We provide a graphic software that runs on 3D Process / Device Simulator. This tool visually demonstrates one-three dimensional calculation results in various manners such as cross-sectional views, a graph of linear distribution, etc including display / non-display setting in the relevant regions.