Products

This series are three dimensional process simulators provided with a 3D topography / structure calculation technique and a high-speed calculation technique. The 3D topography / structure calculation technique and the high-speed calculation technique are the techniques uniquely developed by TCAD International for ensuring superior practical usability. This series provide extremely stable functions to calculate three-dimensional topography / structure, ion implantation and impurity diffusion. Furthermore, these are provided with various functions such as a point defect diffusion model, a stable oxidization calculation, and an extremely precise ion implantation calculation using Monte Carlo model supporting supreme 3D simulation technique. In this series, a general purpose precise wiring capacitance simulator, and a high speed simulator for anlyzing optical characteristics of image sensor elements are also provided.

3D device simulator is provided with a high speed calculation technique and a parallel calculation technique that are the techniques uniquely developed by TCAD International. By using it together with our 3D-Process Simulator, you can enjoy its eminent performance. Using device topography / structure created by 3D-Process Simulator, topography / structure effect of the device can be analyzed precisely. In Mixed-Mode analysis coupled with a circuit simulator, device operation in an LSI or actual circuit can be analyzed. Analysis of erroneous operation in a circuit level, which is caused by α-ray incidence, is also carried out at a high speed. Particle model, which uses an acceleration parallel calculation and / or Window-Monte Carlo method, gives you deep inside of device operation.